Tkachuk P. The electron processes peculiarities in ZnSe and CdTe by heterovalent substitution of components.

The work is devoted to investigation of electron processes peculiarities in AIIBVI compounds caused by heterovalent substitution of components to wit: DX(AX)- liked centers formation, mixed crystals of AIIBVI-AIIIBV type fabrication and presence of residual impurities. The perspective direction of solid state physics connected with a shallow-deep transition as result of lattice distortion around a substitutional atom when heterovalent doping is developed. The results are important for development of scientifical bases of the ionizing radiation detectors creation also. First the experimental electronic structures investigation of ZnSe <As>, ZnSe <Ga> and CdTe <Cl> single crystals, which is co-ordinated with the contemporary notions about AsSe-. GaZn- and ClTe-centers nature, theoretical models of their configurations and their energy spectrum calculation is carried out.The model of the inhomogeneous semiconductor for ZnSe-GaAs mixed crystals nearby ZnSe is worked out, the X-ray luminescence and sensitiv ity mechanisms are investigated.The effect of non-stoichiometry and residual impurities on impurity-defect structure of cadmium telluride is studied, the new information about accompanying defects- VTe, TeCd and Frenkel's pair VTe-Tei- is received.The effect of the technological impurity of carbon on electrophysical parameters, complex creation and compensation mechanisms in CdTe <Cl> insulate crystals and detector's material characteristics is studied.On the base CdTe <Cl> single crystals the detector-dosimeter model and the spectrometric nuclear detectors are fabricated.