Bondar V. Recombinational, photoelectrical and photochemical phenomena in wide band layered crystals and structures caused by complex defects at low-energy excitation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0502U000319

Thesis Registration Form

0502U000319.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

19-06-2002

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

Methods for obtaining oxide- halide- and nitride-based thin film and crystalline phosphors have been developed. The mechanisms of recombination processes caused by complex and interacting defects have been established. Electron-atomic processes connected with transformations in the dopant-defect structure under low energy excitation have been studied. The materials and devices for informational displays and detectors of emission have been developed for optoelectronic applications.

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Files

Dis1.doc

aref.doc

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