Bagmut A. Formation of structure and phase transformations during pulse laser condensation of metal, oxide and semiconductor films

The object is process of formation of structure and phase transformations during pulse laser condensation of metal, oxide and semiconductor films; the aims to the problem solving of mechanisms of formation and phase transformations in films, deposited by pulse laser sputtering; the methods are electronography, transmission electron microscopy, mossbauer spectroscopy and rutherford backscattering spectroscopy of ions. Results, novelty - for the first time there were established the physical mechanisms of structure formation at discrete deposition on a substrate of a vapour-plasmous stream, generated by pulse laser sputtering of single-element metal and semiconductor targets, as well as to the research of structural and phase transformations in films in the post-condensation period. The models were proposed and the conditions of formation of epitaxial, polycrystalline and amorphous gas saturated conglomerate structures were established. The stages of growth were in details investigated and the model of epitaxial laser condensate surface which predetermines structural reorganizations at subsequent annealing or aging was experimentally grounded. On the basis of generalization of all received data, the basic types of structural and phase conditions, character of nonequilibriumiti and types of relaxation processes in post-condensation period in laser condensates of metals with various degree of chemical activity were discovered and classified for the first time. The field is physics of thin solid films.