Rudko G. Structural transformations and changes of the energy spectrum in semiconductor materials for electronics at doping and spatial confinement

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0505U000316

Thesis Registration Form

0505U000316.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-05-2005

Specialized Academic Board

Д26.199.02

Essay

Dissertation deals with the investigation of the mechanisms of the physical properties, namely, structural and energy spectrum changes that occur in semiconductors at doping and quantum confinement of carriers. The changes of the photoluminescence and absorption of semiconductors at different doping types - isoelectronic, implantational, due to prolongated annealings, with magnetic impurities, with high concentrations of doping impurity. The low-dimensional silicon materials are investigated and two new light-emitting materials are found - anisotropically etched silicon and filament-like silicon. New properties of spin relaxation in quantum wells and superlattices are observed - the presence of two spin-dependent cascades of energy relaxation of excitons, suppression of spin-flip transitions at low values of the wave vectors, influence of the spin-splitting on the spin relaxation.

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Files

Aref.doc

dis.doc

dis.doc

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