Sterligov V. Processes of light scattering by nano- and microscopical objects in semiconductors and dielectrics

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0505U000594

Applicant for

Specialization

  • 01.04.05 - Оптика, лазерна фізика

24-11-2005

Specialized Academic Board

Д 26.159.01

Institute of physics of NAS of Ukraine

Essay

The thesis deals with investigation of the processes of light scattering from nano-size objects and structures (much less than the optical radiation wavelength) on surfaces of semiconductor crystals and dielectric films. It is obtained that scattering of surface waves from nanoparticles is characterized by spatial distribution of scattered light intensity; this distribution depends essentially on the nanoparticle size distribution function. A method for comparing the results of surface and volume wave scattering is developed. This method is applied for metal nanoparticles and one-dimensional surface defects. For light scattering by nanomembranes, it is shown that coherent interference from scattering sources distributed in film depth occurs. Subatomic sensitivity of light scattering to surface relief is demonstrated experimentally. A method for discrimination of light scattering from surface relief and nontopographic surface defects is developed. A considerable contribution of nontopographic scatteringto the processes of light scattering from surfaces of silicon and gallium arsenide wafers is demonstrated. It is shown that angular dependence of the integral intensity of surface wave scattering serves as indicator of plasmon-polariton resonance in a much wider range of variation of optical parameters of adjacent medium than that provided by the traditionally used minimum of the specular reflection coefficient. The experimental techniques of consequent and concurrent measurements of spatial distribution of light scattering within a hemisphere are developed.

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