Vitusevich S. Transport phenomena in quantum-sized heterostructures based on III-V group elements

Mechanisms of tunneling in AlGaAs/GaAs double-barrier resonant tunneling diodes (DBRTD) with wide spacer layer have been established. A theoretical model of observed for the first time fine oscillating structure and effect of intrinsic bistability were found to be in a good agreement with developed theoretical model of quantum interference. The technology of DBRTD with field-induced superlattices have been developed. Modification of transport mechanisms at decreasing dimensionality by increase of the superlattice voltage was investigated and analyzed. The correlation between electrophysical, optical and design-technological parameters and quantum-sized effects are established in GaAs-based p-n diodes with two coupled delta layers. Fine oscillating current, S- and Z-types bistability of p-n diode with double barrier structure containing quantum dots layer were revealed. Experimental and theoretical results are in a good agreement. Advantages of GaN-based heterostructures for different micro- and nanoelectronic devices were considered on the basic of complex research of their electro-physical properties. The role of hot carrier and Juole self-heating effects on transport phenomena in AlGaN/GaN high electron mobility transistor structure have been determined separately. New types of high frequency oscillators for satellite application have been designed, investigated and their advanced characteristics have been demonstrated.