Nadtochiy V. Microplasticity of diamond-like crystals (Si, Ge, GaAs, InAs)

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0506U000492

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

08-09-2006

Specialized Academic Board

Д 64.051.03

V.N. Karazin Kharkiv National University

Essay

The object is monocrystals Si, Ge, GaAs and InAs; the aims is to solve the problem of microplastic deformation of cristals at stress ?400 MPa in the area of low temperatures; the methods: microindentation, uniaxial pressing, laser radiation; optical and electronic microscopy, X-ray topography; innovation: investigations of the low-temperature (T<0,35 Tmelt) microplastic deformation of monocrystals at small and average levels of stresses (?400 MPa); results - the heterogeneous mechanism of the origin of prismatic dislocations' loops on the interphase surface of inclusion with matrix has been analysed, new experimental results of the defects influence, created through microplastic deformation, on the electric Ge - properties (conductivity, delay time of nonequilibrium change carriers) and Si p - n-junctions have been received; area of use: solid state physics.

Files

Similar theses