Padlyak B. Spectroscopy and structure of the luminescence centres and radiation-induced defects in the glasses of CaO-Ga2O3-GeO2 system

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0507U000235

Applicant for

Specialization

  • 01.04.05 - Оптика, лазерна фізика

13-03-2007

Specialized Academic Board

Д 35.071.01

Vlokh Institute of Physical Optics

Essay

The nominally-pure and doped with transition and rare-earth elements glasses of the СаO-Ga2O3-GeO2 system were synthesized and their structure was investigated. The recombination mechanism of the intrinsic luminescence in the glasses is proposed. On the basis of optical and EPR spectroscopy the incorporation peculiarities of Mn in the glasses of СаO-Ga2O3-GeO2 system, local structure and influence of the Mn2+ centres on the intrinsic luminescence were considered. The low-field and high-field Cr3+ centres in the glass and precipitates of crystalline phases have been investigated. The crystal field parameters of the high-field Cr3+ centres in the glass and precipitates of crystalline phase were calculated and the configuration-coordinate diagram for high-field Cr3+ centres was created. From optical, EPR and EXAFS spectroscopy data the electron and local structure of rare-earth luminescence centres and basic lasers parameters of the Er3+ і Nd3+ centres in the glass were determined. The nature of the radiation-induced defects in the compounds of СаO-Ga2O3-GeO2 system was investigated.

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