Zorenko Y. Luminescence of single crystals and single crystalline films of oxide compounds with garnet and perovskite structure

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0508U000251

Thesis Registration Form

0508U000251.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

09-04-2008

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

The nature of the intrinsic luminescence of single crystals (SC) and single crystalline films (SCF) of oxide compounds with the structure of А3В5О12 (A=Y, Lu, Gd; B=Al, Ga) garnet and АAlO3 (A=Y, Lu) perovskite, in particular, the luminescence of excitons and centers formed by antisite and vacancy-type defects (AD and VD). Peculiarities of the luminescence of SC and SCF of Y-Lu-Al- garnets and perovskites, doped with different types of impurities: rare earth ions with 4f-5d transitions (Cе, Pr), isoelectronic impurities (Sc, La) and mercury-like ions (Pb, Bi) have been studied. It has been found that features of the intrinsic and impurity luminescence in SC and SCF of garnet and perovskites obtained from melt and melt-solution by liquid-phase epitaxy method based on the PbО- or Bi2О3-containing fluxes are determined by absence in SCF of AD and low concentration of VD, as well as by presence in SCF of Pb and Bi trace impurities.

Read more

Files

aref1.doc

aref2.doc

ВИСНОВКИ.doc

ВСТУП.doc

ДОДАТОК-А.doc

Розділ1.doc

Розділ1.doc

Розділ2.doc

Розділ3.doc

Розділ3.doc

Розділ4.doc

Розділ5.doc

Розділ5.doc

Розділ6..doc

СПИСОК ВИКОРИСТАНИХ ДЖЕРЕЛ.doc

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures