Novikov S. Simulation of X-ray topographic defect images in real Si crystals

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0511U000061

Thesis Registration Form

0511U000061.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

27-11-2010

Specialized Academic Board

Д 76.051.01

Essay

The devoted determination of mechanisms and regularities of diffraction patterns formation for single defects in silicon (microdefects, dislocations, dislocation loops and Lomer-Cottrell locks) and their complexes on sectional and projection topographs at the action of external influences (ultrasonic deformations, equidistant and exponential bending of atomic planes and action of concentrated forces). The specific effects - channeling effect and effect of total external X-ray reflection in the case of the perpendicular edge dislocation in the Borrmann fan - were established. The features of formation of intensity oscillations in dependence on thickness in the strongly distorted areas of the crystal.

Read more

Files

aref.doc

Similar theses

0424U000065

Mazur Dmytro V.

X-ray absorption and magnetic circular dichroism spectra features in compounds containing oxygen and based on 4th period metals

0523U100214

Serhii V. Oliinyk

Physical basis of formation of electrical and photoelectric properties of AIIBVI crystals and electrical properties of multicomponent coatings

0522U100045

Bohdanov Yevhen Ivanovych

Effects of azimuthal asymmetry of radiation scattering in crystals and new possibilities of diffuse-dynamical diffractometry

0522U100002

Vladymyrskyi Igor A.

Thermally-induced structural phase transitions in heterogeneous systems based on magnetic and nonmagnetic nanolayers

0521U102118

Kornyushchenko Anna S.

Structure formation and physical properties of nearequilibrium metal, oxide and multicomponent condensates with nanoscale elements