Semchuk O. Features of the electric, optical, and thermal processes caused by the laser irradiation of the condensed matter surface: theoretical aspects

The tesis is devoted to theoretical study on the features of the electrical, optical and thermal processes caused by laser irradiation of the condensed matter surface. A wave function of a conduction electron in the field of CLB, probability of electron transition from a state described by a quasi-momentum to that characterized by one, and quantum kinetic equations for interacting particles (electrons, magnons and phonons) in semiconductors have been obtained. The diffraction of a failing electromagnetic wave on the laser-induced lattice of electron concentrations in ferromagnetic semiconductors (FMSC) has been investigated, the scattering laws for electromagnetic waves on the external surface of FMSC with a laser-induced surface lattice of the electric intensity have been analyzed. The thermal effects caused by influence of the intensive laser radiation on a outer solid surface has been considered. The non-coherent light scattering by the interaction of a failing electromagnetic wave with fluctuations of the surface Rayleigh waves of the boundary of an isotropic elastic medium has been considered. It has been found that a reflection takes place for two frequencies with practically identical intensities.The scattering angle the photoelastics mechanism of scattering becomes qualificatory. In the fifth section, the scattering of electromagnetic waves by a fractal surface has been considered. Within the framework of Kirchhoff method, when approximating the scattering surface by a two-dimensional strip Weierstrass function, the average light scattering coefficient for a fractal surface has been calculated. It has been obtained that the calculated position of the peak of light absorption by the gold nanoparticle with the radius of 20 nm, lying on GaAs substrate , comply with both the theoretical value of Frolich wave-length for gold particles and the experimental data. The field dependences of electromagnetic wave scattering and transformation cross-sections in n-InSb semiconductors have ben found. They have been shown to differ from that for the Tompson cross-section the electromagnetic wave scattering on free electrons and to testify to the necessity to consider the mutual orientation of the vector of a falling wave and the external heating electric field in the processes of scatterin and transformation of electromagnetic waves on fluctuations in nonequilibrium semiconductor plasma.