Melnik V. The process of mass transfer and the formation of nanosized phases in solids, stimulated by ion beams

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0512U000512

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

13-06-2012

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

Thesis is devoted to the study of the processes of ion beams interaction with the solid-state structures and the establishment of the physical mechanisms of ion-stimulated formation, reconstruction and modification of nanoscale phases. It is shown that the use of ion stimulation for guided mass transfer processes can effectively influence the course of quasichemical solid-state reactions in the matrix during the formation and modification of the buried dielectric layers in silicon, the silicon nanoclusters in dielectric matrix, the thin surface SiGe films, the nanocrystalline thermochromic vanadium dioxide films and others. These effects are explained in the frameworks of physical models which take into account the influence of mechanical stress, distributions of radiation defects and impurities on the processes nucleation and transformation of nanosized phases in a solid. The original method of reference samples synthesis by ion beam for ensures precision of quantitative elemental analysis of solid matrices with nanometer resolution in depth has been developed. These effects and the method were used to create micro / nano / optoelectronic nanostructures with new features.

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