Gaidar G. Influence of nuclear irradiation and thermal fields on the kinetics of electron processes and defect formation in Si and Ge

The thesis is devoted to the study of the regularities of nuclear irradiation influence and thermal fields on the kinetic effects, and on the processes of defect formation in Si and Ge crystals. Based on the experimental data and calculation results of annealing and formation processes of point defects in irradiated crystals the various mechanisms of interaction of radiation defects between themselves, with doping and background impurities were studied. The appropriate reactions to explain the processes of the transformation of defects were suggested. The methods to improve the radiation hardness of silicon irradiated with fast-pile neutrons were established. For n-Ge the method for determining of the stretching tensoresistance, which hard measured in the experiments, from the experimental data of the compression tensoresistance, measured fairly simply and reliably, was proposed. The features of anisotropy parameter changes of mobility and thermoelectromotive in n-Si crystals depending on method of doping with phosphorus impurity and various thermal treatments were found. The lower values of anisotropy parameters of mobility and thermoelectromotive in n-Si compared to n-Ge were explained. The features of the concentration dependences of anisotropy parameters of mobility and thermoelectromotive in n-Si and n-Ge crystals were established. A method for determination of the degree of compensation for shallow impurities in n-Si crystals with a nondegenerate electron gas is suggested. The nomogram is calculated to provide the convenience of practical use of this method.