Vainberg V. Transport phenomena in selectively doped semiconductor heterostructures with different kinds of quantum wells.

There have been carried out experimental investigations and analysis of mechanisms of the electric conduction, galvanomagnetic and photoelectric phenomena in the selectively doped heterostructures based on Ge-Si and the III-V semiconductor compounds with different kinds of quantum wells (QW) and -layers of impurity in QW or adjacent barrier layers. The numerical calculations of the electron energy spectrum and mobility, spatial charge distribution, and magnetoresistance have been performed. Based on them the models explaining the electron gas behavior under the equilibrium conditions and conditions of heating by the strong lateral electric field, as well as in strong magnetic fields have been developed. The role of the impurity band in formation of the electron energy spectrum and its influence on the lateral transport phenomena in the structures with the -layers of impurity in the region of QW have been analyzed. The dependence of the shallow impurity parameters on its position in QW has been explored. The electric transport and magnetotransport have been investigated in some bulk semiconductor, polymeric, and carbon materials; the models of their low-temperature conduction and perspective application in cryogenic sensorics have been proposed.