Pavlyk B. Radiation- and thermo-stimulated processes of defects aggregation and emission of dielectric and semiconductor crystals components.

Українська версія

Thesis for the degree of Doctor of Science (DSc)

State registration number

0599U000266

Thesis Registration Form

0599U000266.pdf

Applicant for

Pavlyk Bogdan Vasyl'ovych

Specialization

01.04.10 - Фізика напівпровідників і діелектриків

Date of defense

02-06-1999

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

Object of investigations: Dielectric and semiconductor crystals. Aim of investigetions: Study of regularities of radiation defects aggregation processes and eduction of investigated compound components. Methods: Optical spectroscopy, mass spectroscopy, microscopy, capasity-modulation spectroscopy. Results: The model of radiolisys of hydrogenous dielectric crystals was suggested. The regularity and eduction mechanism of compound components was ascertained. Inculcation: The results are used in the production of electron-beam memory tubes. Application: The production of electron devices. Theory of crystals radiolysis processes.

Thesis supervisor

Стахіра Й.М.

Official opponents

Литовченко В.Г.
Блонський I.В.
Матковський А.О.

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