Muryi Y. Properties of nanocomposite films with silicon nanoclusters and metal (Al) inclusions in the oxynitride matrix

Українська версія

Thesis for the degree of Doctor of Philosophy (PhD)

State registration number

0824U002996

Thesis Registration Form

0824U002996.pdf

Applicant for

Specialization

  • 105 - Прикладна фізика та наноматеріали

05-09-2024

Specialized Academic Board

6292

Taras Shevchenko National University of Kyiv

Essay

Relevance of the topic. To date, a significant amount of research has been devoted to silicon-enriched SiOx films and SiO2(Si) nanocomposite films containing Si nanocrystals in an oxide matrix. The great scientific interest in such films is due to their charge capture and ability to emit light, which is very attractive, in particular, for use in Si-based nanoelectronics and optoelectronics, namely for non-volatile nanocrystalline and resistive memory, photodiodes, solar cells, field emission cathodes, etc. The formation of Si nanocrystals in the matrix of amorphous silicon oxynitride (SiOxNy) is a very promising approach to obtaining silicon-based nanocomposite structures. The ability to control the properties of SiOxNy by adjusting the amount and ratio of oxygen and nitrogen is the reason for the widespread use of this material for multilayer structures with a variable refractive index, waveguides, surface passivation layers, and medical implant coatings. The refractive index adjustment makes SiOxNy well suited for optical applications. The other class of oxide films, namely metal oxides, is represented by a wide variety of functional materials for many applications, including sensors, energy storage, catalysis, optoelectronics, photonics, etc.

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Research papers

Evtukh A., Kizjak A., Bratus O., Antonin S., Muryi Ya., Marin V., Ilchenko V. “Negative capacitance and dielectric constant of nanocomposite SiAlzOxNy(Si) films with semiconductor nanoparticles”, Nano Letters, 2024, V. 24 (2), P.617­622, 20, doi: 10.1021/acs.nanolett.3c03627

Evtukh A., Kizjak A., Bratus’ O., Voitovych M., Romanyuk V., Mamykin S., Antonin S., Muryi Ya., Klymenko V., Sarikov A., “Structure and electrical conductivity of nanocomposite SiOxNy(Si) and SiAlzOxNy(Si) films”, Journal of Alloys and Compounds, 2023, V. 960, P. 170879, https://doi.org/10.1016/j.jallcom.2023.170879.

Pylypova O., Antonin S., Fedorenko L., Muryi Ya., Skryshevsky V., Evtukh A., “Influence of laser annealing of silicon enriched SiOx films on their electrical conductivity”, Silicon, 2022, V. 14, P. 12599 - 12605, https://doi.org/10.1007/s12633- 022-01959-2.

Evtukh A., Kizjak. A., Bratus’ O., Muryi Ya ., Marin V. , V. Ilchenko V., “Negative capacitance and dielectric permittivity of nanocomposite films with semiconductor and metal nanoparticle” in Intern. Conf. Nanotechnologies and Nanomaterials, Bukovel, Ukraine, 2023, P. 107.

Bratus O.L., Muryi Ya. Yu., Pylypova O.V., Ivanov I.I., Matiyuk I.M., Lytvyn P.M., Korchovyi A.A., Venger Ye.F., Evtukh A.A., “Al-based surface plasmon resonance for enhancement solar cells parameters” in Abstracts of Intern. Conf. Nanotechnologies and Nanomaterials, Bukovel, Ukraine, 2023, P. 276.

Evtukh A., Kizjak A., Bratus’ O., Muryi Ya., “Effect of negative dielectric permittivity in nanocomposite SiAlzOxNy(Si) films”. in Abstracts of IX Ukrainian Scientific Conference on Physics of Semiconductors (USCPS-9), Uzhgorod, Ukraine, 2023, P. 97-98.

Kizjak A.Yu., Evtukh A.A., Bratus’ O.L., Antonin S.V., Muryi Ya., “Conductivity of nanocomposite SiOxNy and SiOxNyAlz films” in Abstracts of Intern. Conf. Nanotechnologies and Nanomaterials, Lviv, Ukraine, 2022, P. 123.

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