Semchuk S. Features of phonon transport in stressed Si and Ge­based nanowires

The dissertation presents a study of thermal transport in silicon¬ and germanium-based nanowires of various morphologies and the peculiarities of the strain impact on the thermal conductivity of SiGe nanowires. The dissertation consists of an introduction, four original chapters, general conclusions, a list of references, and an appendix. The introduction substantiates the relevance of the chosen research topic and formulates the aim of the dissertation, which is to establish the mechanisms of thermal transport in strained semiconductor nanowires based on silicon and germanium of various morphologies. The object of the study is the processes of phonon transport in one-dimensional nanostructures of silicon and germanium with structural inhomogeneities and/or fields of mechanical stresses. The subject of the study is silicon and germanium nanowires of different component compositions and morphologies.