Frolov O. Optimization of construction and technology of planar drift n-p-n transistors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U000133

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

24-12-1999

Specialized Academic Board

Д 67.052.03

Essay

Questions of designed and manufactured bipolar transistors and microcircuits are examined in dissertation. A new method of n-p-n transistors calculation, which based on the new empirical expressions to calculation optimal parameters of constructions by electric parameters and technology of transistors with small deviations of electric parameters and characteristics are proposed. Results of this dissertation bring in manufactured of products. Zone of employment - technology and manufacture products of electronics

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