Kosulia O. Development of mass spectrometry techniques for the study of dielectric matrices and stressed nanoscale structures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0421U103151

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

12-05-2021

Specialized Academic Board

Д 26.199.01

VE Lashkarev Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine

Essay

In the dissertation a mathematical model and design of a microelectronic coordinate-sensitive detector for a laser mass spectrometer have developed, which allows for elemental and isotope analysis in real time without special sample preparation, especially dielectric matrices. Actual structures were obtained, namely: multilayer nanoscale structures and thin films. A comparison of the sensitivity by elements of different mass spectrometric techniques on the example of a standardized steel sample RG 27 and developed a complex of mass spectrometric techniques to study the effect of phase composition of thin oxide films on the signal intensity of cluster ion and impurity distribution near the interface. The influence of deformation fields on the value of the sputtering coefficient is investigated. Experimental results are presented and a theoretical model is developed, which explains the influence of deformation fields on the ion yield coefficient. In the dissertation a mathematical model and design of a microelectronic coordinate-sensitive detector for a laser mass spectrometer have developed, which allows for elemental and isotope analysis in real time without special sample preparation, especially dielectric matrices. Actual structures were obtained, namely: multilayer nanoscale structures and thin films. A comparison of the sensitivity by elements of different mass spectrometric techniques on the example of a standardized steel sample RG 27 and developed a complex of mass spectrometric techniques to study the effect of phase composition of thin oxide films on the signal intensity of cluster ion and impurity distribution near the interface. The influence of deformation fields on the value of the sputtering coefficient is investigated. Experimental results are presented and a theoretical model is developed, which explains the influence of deformation fields on the ion yield coefficient.

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