Kedyulych V. Anisotropy of the dielectric properties, p,T,E-diagram and crytical behaviour of the Sn2P2S6 crystals under high pressures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U000336

Thesis Registration Form

0400U000336.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

23-12-1999

Specialized Academic Board

К 61.051.01

Essay

The Sn2P2S6 ferroelectric-semiconductor. Complex investigations of temperature effect, pressure and electric field on dielectric properties of Sn2P2S6 crystals in different crystallographic directions. Experimental investigations of dielectric parameters on the basis of the automized installation and analysis of the obtained results. The view and features of pointer surfaces of dielectric susceptibility and dielectric loss tangent was obtained. Is constructed р,Т,Е-diagram of the Sn2P2S6 crystal and her features are circumscribed. The analysis of Curie-Waiss constant behaviour along phase р,T-diagram carried out and the critical exponent of an dielectric susceptibility in the vicinity of a Lifshitz point is spotted. The results can be used in physics of ferroelectrics.

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