Khaled I. Development and research of a manufacturing process of laser sharing of semiconductor wafers for units

In operation the original technique of definition of temperature dependence's of an optical behavior of materials grounded on application methods of nonlinear programming designed, and as the function of the purpose have utilized min of a functional of discrepancies between calculated and measured by the receiver, powers of a bundle of a laser radiation, past tested the sample in an appropriate instant with simultaneous fixing of power of a bundle of radiation of the reached(achieved) work piece and reflected from it(her). With the help of a designed technique in operation the dependence of reflection factors both absorption mono and polysilicon from temperature (wavelength of radiation - 1.06mkm) are defined. Besides it is found, that at high densities of energy of the focused laser radiation, there is an alignment of an optical behavior poly and single crystals on outcome of heat. Using methods of a design of experiments the models of a cutting process of a poly crystal (width 0.3-0.5мм) with scannin g focused laser beam had been obtained.