Gorbenko V. Research of changes of properties of subsurface layers of indium phosphide under action of hydrogen atoms with thermal energy.

The dissertation is devoted to study of modification of composition and properties of subsurface layers of the semiconductor material and phenomena in complex heterogeneous system. The gas phase of considered system is formed by effect of high frequency discharge on a mixture of hydrogen and water molecules. It was established, that the changes in composition of indium phosphide is able to develop in two directions: formation on the surface of a metallic layer of indium and enrichment of subsurface layers by oxygen. The direction of development is depended on a ratio of contents of hydrogen and water molecules in a gas phase. It was found, that the interaction of atomic hydrogen with atoms of the semiconductor stimulates a sublimation of molecules P2 and enhancement of oxygen atoms diffusion in subsurface layers. It was established that the electrophysical characteristics of metallic layer of indium are ohmic. For the method of determination of an extremum of a functional of thermodynamic function tech niques have been developed that allows using the method for a modeling of processes in complex heterogeneous system with the high contents of radicals.