Danylenko S. Development of etching compositions and technological procedures of polishing surfaces formation of indium arsenide and antimonide substrates for IR electronics.

Thesis is devoted to investigation of InAs and InSb interaction with solutions of the HNO3-HCl(HBr)- complexing agent systems and to development etching compositions and technological procedures of polishing surfaces formation of indicated semiconductors using obtained experimental results. The surfaces of equal etching rates of indium arsenide and antimonide in all investigation solutions were constructed using the simplex method of mathematical planning of the еxperiment, when water, acetic, tartaric, oxalic, lactic and citric acids were used as complexing agent. The compositions of polishing etchants in the investigated systems were optimized and conditions and methods of InAs and InSb polishing surfaces preparation were developed.