Sun V. HgMnTe-Based Infrared Detectors: Physical and Technological Problems. - Manuscript.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002593

Thesis Registration Form

0400U002593.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-09-2000

Specialized Academic Board

Д. 76.05101

Essay

HgMnTe-based protodiode detectors for the spectral range of 3-14 microns with p-n junctions formed by etching have bee investigated. The role of carrier diffusion, generation-recjmbination, tunneling and avalanche processes in determining the electrical properties andetectivity jf the diodes are establisheg. The responsvity spectra are treated with account made for carrier gtntration in the depletion layer, n- and p- regions of the diode structure,and surface recombnation as well.

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