Ishchuk L. Extreme currents in semiconductor structures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002703

Thesis Registration Form

0400U002703.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

23-10-2000

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

A new current oscillation type was discovered. It occurs at extremely high current density flowing through the SOI structure. The model of their occurrence was suggested. They are interrelated with the lattice temperature oscillation. Lattice temperature was change from 700 to 1300 K with the frequency up to 3 MHz. A reversed ambipolar drift was observed in silicon for the first time. Irreversible changes of the ITO film conductivity due to the extremely high current density heating was discovered. The fields of application are fundamental physics and microelectronics.

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