Kras'ko M. Influence of isovalent impurity of tin on thermal and radiation creation of defects in silicon

The experimental results of isovalent impurity influence of tin on electrophysical properties of silicon under thermal and radiation treatments are investigated in the work. The influence of tin-doping on the processes of creation and annealing of thermal and radiation defects is found out. It is shown the activation energy of creation and annealing of thermodonors decreases in the silicon with tin during thermal treatment at 450 0C. The model of tin influence on the process of thermodonor creation is proposed. The model supposes the existence of metastable defect of oxygen-tin. The theory of thermodonors creation kinetics in the samples as with tin as without tin is created. The creation of two electron levels of acceptor type under the proton (61 Mev) irradiation is also shown that are connected with the same radiation defect with the vacancy in its structure. It is shown the radiation defects that are responsible for changing of life time of current carriers under gamma irradiation in n-Si<Sn> are m ore thermostable than in n-Si without Sn.