Lop'yanka M. Optimization of technology and simulation of physical processes in thin films АIVВVI and frames on their basis.

A thesis is dedicated to study of effect of operational technology factors of growing from a vapour phase on physical properties of thin films of monochalcogenide of lead, tin and solid solutions on their basis: PbSe1-XTeX, PbXSn1-XTe, (SnSe)1-X(PbTe)X, (SnTe)1-X(PbSe)X by a method of a hot-wall. Are offered both the technological diagrams are constructed and the technology is optimized, which one ensure cultivation of a thin-film material with beforehand given parameters. The physicochemical model of process of growing of films АIVВVI from a vapour phase is offered. On the basis of the generative - recombinational mechanism of a radiation defect formation the dosed dependences of concentrations of charge carriers in acting epilayers are explained at an exposure by alpha-particles.