Bomk O. The gas sensitivity of the surface - barrier structures based on silicon, gallium arsenide and cadmium sulphide with superthin films of the titanium and nickel

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002899

Thesis Registration Form

0400U002899.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

23-10-2000

Specialized Academic Board

Д 26.001.31

Taras Shevchenko National University of Kyiv

Essay

The thesis is devoted to learning of the using possibility of the surface - barrier structures with superthin metal films as the transducer of gas environment and to ascertaining of physical processes, which determine this influence on physical properties. The current - voltage, voltage - capacity characteristics, the surface specific resistance, the modelling of adsorption process, the atomic-force microscopy are the methods of researching. The sensitivity of the surface - barrier structures based on Si, GaAs та CdS with superthin films of the titanium and nickel to ammonia, carbonic gas, krypton, ammonia water solution and humidity is investigated. The sensitivity mechanisms are ascertained. The physical methods of the influence analysis of the gas environment on the properties of heterophase structures are developed. The application field is the semiconductor electronics.

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