Voznyj M. Influence of defect subsystem on photoelectric properties of silicon

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U003023

Thesis Registration Form

0400U003023.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

25-10-2000

Specialized Academic Board

Д 76.051.01

Essay

The thesis is devoted to determination of influence of silicon defect subsystem on its photoelectric properties as result of gamma-quanta irradiation, ion implantation and hydrogenation of material. An opportunity of samples with advanced photoconductivity obtaining due to utilization of powerful gamma-irradiation sources, control of current density and ion energy under implantation and observance of certain temperature conditions and hydrogen inflow rate into silicon during hydrogenation was shown.

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