Ukrayinets' N. Vapour phase crystal growth process of cadmium and zinc tellurides and Schottky barriers on their basis

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U003045

Thesis Registration Form

0400U003045.pdf

Applicant for

Specialization

  • 01.04.01 - Фізика приладів, елементів і систем

27-10-2000

Specialized Academic Board

Д 35.052.13

Lviv Polytechnic National University

Essay

The thesis subject is optimization of the vapour phase growth processes of CdTe and ZnTe single crystals with making use of chemical transport reaction method by taking into account their non-stoichiometrical nature in a mathematical model of Me(Cd,Zn)Te-NH4Cl systems. By complex investigation of photovoltaic effect in CdTe based SB, with CdTe grown using NH4Cl (Br,J), it has been shown that there takes place doping of CdTe by halogens Cl, Br, J. The physical grounds for the creation of a polarized radiation photoanalyzer on the basis of In-CdTe<Cl(Br,J)> SB are formulated. The effect of the contacts rectification in Cu~-p-CdTe-Cu and Au~-p-CdTe-Au structures has been revealed, and its model has been developed

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