Gajdar G. The features of the scattering anisotropy in the n-Si and n-Ge crystals which appear under the influence of the axial elastic deformation, heat treatment and the nuclear irradiation

Object of investigation: kinetic of electron processes and they dependence from anisotropy of electron gas scattering on lattice vibration and on impurity centers (with different origin mechanism) in n-Si and n-Ge. Aim of work: complex investigation of scattering anisotropy peculiarities and role of radiation defects in the formation of electro-physical properties of n-type Si and Ge under various doping level and taking into account the existing of the trace impurities for conditions of external fields action. Methods: Even and ordinary Hall effects, measurements of resistance, magneto-resistence, thermo- electromotive force. Main results: the values of deformation potential constants in neutron irradiated n-Si crystals and the parameters of anisotropy for electron gas scattering and anisotropy of thermo-electromotive force have been obtained. The influence of compensation level on such processes has been studied.