Gorbulyk V. Development of high efficient silicon based photo-electrical converters

The work is devoted to development of high efficient silicon based photo-convereters. The improvement of the devices properties has been achieved due to improvement of the material recombination properties, application of new technological and design approaches. For the first time, it was proposed new technology for gettering of recombination active impurities in silicon. The technology includes deposition of Ge film onto Si wafer back side, ion-beam mixing folowed by post-implantation annealing. It has been shown that silicon solar cell (SC) efficiency may be increased up to 1.3-1.45 times owing to deposition of antireflection carbon films. The effect is determined by decreasing of light reflection losses, passivation of the SC surface by plasma treatment during after the coating deposition. New construction of large area SCs and moduli has been proposed. SCs and moduli with efficiency >14% and >12.5%, correspondingly, have been produced by using the technology proposed.