Galochkin O. Development of radiation-resistant photostructures based on A2B6 and А23В36 semiconductors

The PhD thesis is devoted to the development of radiation-resistant photostructures based on semiconductors CdTe, Cd1-xMnxTe (x=0.2), In2Hg3Te6 and the improvement of methods for growing crystals of these semiconductors. The obtained Schottky photodiodes on In2Hg3Te6 with Cr metal film are characterized by sensitivity in the spectral range of 0.6÷1.7 μm, have a current monochromatic sensitivity of 0.43 A/W (at a wavelength of 1.55 μm) and a dynamic range of not less than 8 orders of magnitude (from 10-3 to 105 lx). The dark current of such SPD is in the range of 1÷4 μA at a reverse offset of 1 V, and the height of the potential barrier 0 is equal to 0.41 eV. Manufactured SPD can withstand doses of γ-rays up to 2108 rem. Surface-barrier photostructures on CdTe and Cd1-xMnxTe (x=0.2) are characterized by photosensitivity in the spectral region 0.5÷0.91 μm, the height of the potential barrier 0 for structures on CdTe is 0.9 eV, and the current flow is characterized by 2 mechanisms of charge transfer: generation-recombination and injection, their rectification coefficient is k104 (for CdTe). The spectral dependence of the photoresponse of structures based on CdTe and Cd1 xMnxTe has additional peaks (E = 1.5 eV – for CdTe; E1 = 2.01 eV, E2 = 2.31 eV – for Cd1 xMnxTe), which are shifted to the shortwave region and not associated with their own transitions. The obtained structures can be successfully used as detectors that are sensitive in the near-infrared region of the spectrum and work in conditions of strong ionizing radiation to replace Si-photodetectors.