Pal'ok V. Image relief formation processes at optical recording in selenium based amorphous layered structures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0401U003035

Thesis Registration Form

0401U003035.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

20-09-2001

Specialized Academic Board

К 61.051.01

Essay

Photoinduced changes in light-sensitive amorphous chalkogenide films As2S3, a-Se, AsSe. The aim is to find out the mechanism of surface relief formation at optical, holographic recording in multilayered nanostructures based on chalcogenide vitreous semiconductors an amorphous selenium. Methods: smal-angle X-ray diffraction, atomic force and scanning electron microscopy, modelling. Results: we found out the cause and developed a modell of surface relief formation at optical recording in a-Se/As2S3 multilayered structures and a-Se films. Application: it is planned. Area of application: media for holographic recording.

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