Davydenko S. Production of Quantum-well Structures, Heterostructures and Thin Films of А4В6 Semiconductors and Investigation of Their Properties

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U000304

Applicant for

Specialization

  • 05.27.06 - Технологія, обладнання та виробництво електронної техніки

21-12-2001

Specialized Academic Board

К 26.199.01

Essay

It has been shown that PbTe/PbS superlattices ("discontinuous") with high electrical characteristics and structural perfection could be prepared using the "hot wall" technique. The anomalously strong dependencies of Hall coefficient and resistivity on magnetic field have been found in these superlattices. This fact indicated at presence of charge carriers of two conduc- tion types that is typical for type-II superlattices (misalignedl). The mechanisms have been determined for PbSnTe/PbTeS heterojunctions in a wide (4.2- 150 K) temperature range. The nearinterface states have been revealed in the heterojunctions studied, and character of their effect on the electrical and photoelectric characteristics has been determined. The quantum-well structures have been fabricated that demonstrated photosensitivity in a wide (T=77-300 K) temperature range. For these structures the values of product R0A have been got that were almost an order of magnitude over those for single heterojunctions. The experimental evi dences have been obtained for possibility of fabrication of heterojunctions suitable for production of IR detectors on their basis that operate in the mode of restriction by the background radiation fluctuations.

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