Kavetskyy T. Compositional peculiarities of radiation-induced phenomena in chalcogenide vitreous semiconductors of Ge-Sb-S ternary system

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U002364

Thesis Registration Form

0402U002364.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

19-06-2002

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

Radiation-induced phenomena in chalcogenide vitreous semiconductors (ChVS). To investigate compositional peculiarities of radiation-induced phenomena in ChVS of Ge-Sb-S ternary system and to find adequate analytical correlations for their interpretation. Methods of research are the methods of optical spectroscopy and method of measurement of Vickers Hardness. The radiation-induced darkening effect, which consisting of dynamic and static components and is larger in Ge-rich ChVS and completely absents in Sb-rich ChVS, is established. The free volume concept is the most adequate for interpretation of the observed phenomena. Sphere of use is the IR optics, optoelectronics.

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