Kovalenko N. Formation of oxide films on the surface of AIIBVI single-crystal semiconductor compounds and their solid solutions

The object of investigation: oxide films obtained on the surface of AIIBVI single crystals under different conditions and ZnMgSe single crystals with different Mg concentrations. The aim of investigation: investigation of the process of oxide layer formation on the surface of AIIBVI single crystals; determination of physical (optical, electrical, mechanical) properties of the oxide layers obtained under different conditions; establishment of functionally significant physical properties of ZnMgSe solid solutions with Mg concentration varying within 0.03 ( x ( 0.6 interval. Methods and equipment: IR spectroscopy, X-ray structure analysis, electron microscopy, study of photosensitivity, electrical conductivity and original method of investigation of oxide layer formation kinetics. Theoretical and practical results: realization of thermodynamical analysis of oxidation reactions in AIIBVI-type compounds in ozone atmosphere; establishment of a mechanism of oxide film formation at photothermal oxidation; hasshown the possibility of the MOS-structures. Based on ZnSe-ZnO-heterostructures; finding of peculiarities of mechanical and optical properties of ZnMgSe crystals with Mg contents of about 6 at.%. Range of application: optoelectronics, high-power optics of IR region.