Grypa O. Energy structure of defects and photoelectric properties of doped A2B6 crystals

The investigation of ZnTe, CdTe and CdS crystals doped by Cu, Cr and V impurities were carried out with the purpose of clarification of mechanism for the embeding of 3d-ions into semiconductor matrices of A2B6 group, determination of the impurity center symmetry and position of impurity levels in forbiden gap. Comprehensive low-temperature measurements of the absorption spectra, spectra of photoconductivity and photogalvanic current were performed by using of experimental setup assembled on basis of MDR-23 monochromator and controlled via PC. Mechanisms for the processes of impurity ions ionization were elaborated. Position of impurity levels for different charge states, symmetry and orientation for anizotropic centers completed by ions with different charge were determined for the investigated crystals. Energy of Coulomb interaction for the impurity Cu-ions in ZnTe and CdTe crystals were determined. The results are used in training process and for the elaboration of crystal growing technology. Application - photorefractive materials science.