Kusyak N. "Interaction of InAs, InSb and GaAs with bromine emerging etching compositions"

Thesis is devoted to the investigation of physico-chemical interaction of tin doped and undoped InAs, InSb and GaAs with bromine emerging solutions of the HBr-HNO3(H2O2, K2Cr2O7) systems and to development etching compositions and technological procedures of the surface chemical treatment of indicated semiconductors using obtained experimental results. Using mathematical planning of experiment there were studied 36 surfaces of equal etching rates (Gibbs diagrams) for the InAs and InSb dissolution in the solutions of eleven ternary systems HBr-HNO3(H2O2, K2Cr2O7) - solvent and tin doped InAs and GaAs in the solutions of seven ternary systems HBr-HNO3(H2O2) - solvent. It was established the influence of the nature of oxidant and solvent on the chemical dissolution rate, polishing properties of the solutions and the quality of the InAs, InSb, InAs(Sn) and GaAs polishing surfaces. It was shown that the doping of InAs by tin influences strongly on the chemical etching rates as well as on the concentration regsions of polishing and unpolishing solutions in each from investigated systems. It was determined the existence of compensating dependence in the kinetics of chemical etching at the analysis of temperature dependences of the interaction rate of investigated semiconductor materials with the solutions of the HBr-HNO3(H2O2, K2Cr2O7)-solvent systems. There were optimized the compositions of polishing solutions and developed the conditions and methods for preparing of InAs, InAs(Sn), InSb and GaAs polishing surfaces.