Polyhach Y. Charge state of the gadolinium impurity and native defects in the lead and tin telluride crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001717

Thesis Registration Form

0403U001717.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

23-04-2003

Specialized Academic Board

Д 35.051.09

Ivan Franko National University of Lviv

Essay

Behaviour of the impurities of the rare-earth elements in the multi-component semiconductor crystals and their influence on the crystal properties. To investigate the factors determining charge state of the Gd impurity in the Pb1-xSnxTe crystals and being able to change such state, along with possible mechanisms and results of the interaction between doping impurity and doped crystal matrices. Electron-paramagnetic resonance, Mossbauer spectroscopy. For the first time direct relation between existence of the Gd3+ charge state of the Gd impurity in the Pb1-xSnxTe<Gd> system and its native defects system was found; lowering from cubic of the local site symmetry of the Gd ions possessing the sites in the metal sublattice in the crystals studied was observed. Using Gd impurity during melt growth of the Pb1-xSnxTe<Gd> crystals was found to decrease average concentration of the native point defects. Application area - semiconductor material science.

Read more

Files

Aref.doc

Aref.doc

Dissertation_Pol.pdf

Similar theses

0523U100013

Luniov Sergiy Valentynovych

Influence of defective structure on the electrical and tensoelectrical properties of n-Ge and n-Si single crystals and film nanostructures based on them

0522U100117

Ptashchenko Fedir Oleksandrovich

Influence of long-range interaction between impurity atoms and surface defects on the process of formation, conductivity and sensor sensitivity to NO2 and NH3 molecules of porous silicon and other silicon structures

0421U104048

Mykytiuk Taras I.

Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

0521U102010

Borkovska Lyudmyla Volodymyrivna

Electronic and ionic processes in light-emitting semiconductor materials based on II-VI and III-V compounds

0521U101814

Korotyeyev Vadym Vyacheslavovich

Effects of interaction of terahertz radiation with a strongly nonequilibrium electron gas in bulk and low-dimensional semiconductor structures