Oksyuta V. Electrically and optically active centers of a defective origin in alloyed by Cu and In single crystals CdS and in solid solutions that are based on them

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001761

Thesis Registration Form

0403U001761.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

23-05-2003

Specialized Academic Board

К.32.051.01

Essay

The nature of the local centers with extrinsic-defective structure in semiconductors CdS, that were alloyed by entered by electronic radiation (with E=1,2 MeV) admixtures of Cu and In, is established. The models that explain as some electrically and optically active centers of a defective origin in CdS:In as mechanisms of occurrence and interaction of the radiative defects entered by electronic radiation with alloying impurity of indium and copper are offered. The electric, photoelectric and thermoelectric properties of insufficiently explored solid solutions of the systems CuInS2-CdS and CuGaS2-CdS are investigated respectively to percentage of their components. Galvanomagnetic, optical, electric, photoelectric and thermoelectric properties of single crystals Cu2CdGeS4 and Cu2CdSnS4 and the dependence of their parameters on the way of production and thermoelectric handling were investigated too.

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