Korovyanko O. Quasi-chemical reactions between defects in CdTe, doped with III-A group metals.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U001913

Thesis Registration Form

0403U001913.pdf

Applicant for

Specialization

  • 02.00.21 - Хімія твердого тіла

27-05-2003

Specialized Academic Board

Д 26.207.02

Institute for Problems in Materials Science

Essay

Conformities to the law of defect formation in CdTe<In(Ga,Tl)>.To investigate quasichemical reaction of defect formation in CdTe<In(Ga,Tl)>. Methods of research are investigation of high- and low-temperature electrical measurement of Holl effect, photoluminescence specrta. On the base of the obtained experimental results, a new optimized constant set (СН-5) for defect reactions in CdTe is proposed. In (Ga) incorporation constant calculation was carried out. The based on the constants set CH-5 computer calculation of the defect structure at high-temperature equilibrium, after cooling and reheating to room temperature gives important information about the properties of both undoped and doped by Ga (In, Tl) CdTe single crystals. Sphere of use is Materials Science.

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