Reva V. „Charge coupled devices in application to read-out devices of IR photodetectors".

The dissertation is devoted to the problems of signals receiving and their treatment in infrared (IR) region with large resolution in real time scale. It is also devoted to the analyses of formation route and design of highly reliable readout devices and preliminary information treatment of information in the focal plane from multielement IR photodetectors (the so called "focal processors") directly near the linear or matrix arrays. The readout devices are used for providing of signal receiving functions, charge conversion into the voltage, accumulation, amplification, multiplexion, etc. They should, in addition, effectively operate at cryogenic temperatures. There were worked out and tested the input stages of large charge handling capacity for readout devices on the CCD base from infrared photodetectors, operating at large background fluxes. There were proposed and used the testing elements, which are the elements of circuits, and which allow to carry out the selection of non-defective CCD based readouts on the wafer level without using highly cost multicontact probe system at room temperature conditions, which allows to preview the readout circuits parameters at cryogenic temperatures. For the first time in Ukraine were designed and manufactured in small quantities at the Institute of Microstructures (Kiev) the readout devices on the CCD base from multielement infrared narrow-gap photodiodes of 2ґ64, 4ґ288 formats, operating at cryogenic temperatures.