Nitsuk Y. Influence of native and impurity defects on electrophysical and optical properties of ZnSe:In single crystals, obtained by free growth method.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U002655

Thesis Registration Form

0403U002655.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-06-2003

Specialized Academic Board

Д 41.051.01

Odessa I.I.Mechnikov National University

Essay

Object - processes of an electrical conductivity, optical absorption, luminescence and photoconductivity in ZnSe single crystals, doped by indium during their growth; the purpose - clearing up of a nature of native and impurity centers, defining physical properties of ZnSe:In single crystals, obtained by free growth; methods - in-vestigation of a Hall effect; luminescence, optical absorption, pho-toconductivity spectra; the new approach lies in first developing of nature of centers, defining physical properties of ZnSe:In single crystals, obtained by free growth method. Formation of interstitial donor centers of indium in n-ZnSe:In and acceptor centers in crystals p-ZnSe:In for the first time are obtained; results - the procedure of deriving of high-conductivity crystals ZnSe:In n- and p-type conductance possessing an effective blue luminescence de-signed; the field - physics of semiconductors and dielectrics.

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Files

Автореферат укрмова.doc

Диссертация Ницук Ю..doc

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