Kryvulkin I. The concentration anomalies of properties in semiconductor solid solutions based on tin telluride

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U000213

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

03-12-2003

Specialized Academic Board

Д 64.169.01

Institute for single crystals NASU

Essay

Object of investigation - semiconducting solid solutions based on lead telluride in the PbTe-MnTe and PbTe-GeTe systems. Aim of investigation - the establishment of behavior dependencies mechanical, galvanomagnetic and thermal properties as functions of composition and temperature of semiconducting solid solutions based on PbTe in the PbTe-MnTe and PbTe-GeTe. Methods of investigation: microstructure investigation, X-ray diffraction, measurements of microhardness, electrical conductivity and the Seebeck coefficient, the Hall effect investigation, the coefficient of thermal expansion, thermal conductivity and heat capacity. Theoretical and practical results: the complex study of the physical properties as functions of composition and temperature of semiconducting solid solutions based on lead telluride in the PbTe-MnTe and PbTe-GeTe systems was performed. It was established that in the range of MnTe and GeTe concentrations ~ 0.75 - 2 mol.%, the isotherms of physical properties exhibit anomalous behavior.The detected anomalies are attributed to critical phenomena accompanying the transition to heavy doping, which can be considered as a concentration phase transition. In the approximation of percolation theory, a model of processes that determine the non-monotonic behavior of the concentration dependences of properties is developed. In the dependences of the specific heat on the composition of PbTe-MnTe and PbTe-GeTe solid solutions, distinct peaks are observed at 0.75 - 2 mol.% of MnTe and GeTe, which confirms the existence of phase transitions. We can to assume that a transition to the impurity continuum can be accompanied by self-organization processes in the impurity subsystem of a crystal. Field of application: physics and material research science of ternary and multinary semiconducting compounds, physics of semiconductors, physics of defects.

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