Artemenko O. The influence of adsorption of ammonia molecules on the surface processes in p-n junctions on III-V semiconductors.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U000769

Thesis Registration Form

0404U000769.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

13-02-2004

Specialized Academic Board

Д 41.051.01

Odessa I.I.Mechnikov National University

Essay

Object - on the surface processes in p-n junctions on III-V semiconductors, by the gas sensitivity; the purpose - clearing up of a influence of gas atmosphere on the electrical, photoelectrical and on the surface morphology of GaAs, GaxAl1-xAs, and GaP p-n structures; methods - the complex investigation of a electrical and photoelectrical characteristic, chemical treatment of the surface, investigate by laser elipsometer and Atomic Force Microscope in the range of temperate 300-400K; the new approach - in the p-n structures on GaAs, GaxAl1-xAs, and GaP, placed in а vapors of ammonia, produce an additional surface current. Results are interpreted by formation of conducting surface channel. The established that in GaAs p-n junctions reveals the existence of "slow" recombination centers with a potential barrier of =0,48(0,54еV for the majority charge carriers; results our investigations can be utilized for creation of an ammonia sensor; the field - physics of semiconductors and dielectrics.

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Files

aref.Artemenko O.S.doc

dis.Artemenko O.S--dis1.Титул.doc

dis.Artemenko O.S--dis10.Лит.doc

dis.Artemenko O.S--dis11.Додаток.doc

dis.Artemenko O.S--dis2.ЗМІСТ.doc

dis.Artemenko O.S--dis3.Вступ.doc

dis.Artemenko O.S--dis4.РОЗД 1.doc

dis.Artemenko O.S--dis5.РОЗД 2.doc

dis.Artemenko O.S--dis6.РОЗД 3.doc

dis.Artemenko O.S--dis7.РОЗД 4.doc

dis.Artemenko O.S--dis8.РОЗД 5.doc

dis.Artemenko O.S--dis9.осн висн .doc

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