Nychyporuk G. Phase equilibria, crystal structure and, electrical properties of compounds in the {La,Ce}-In-{Al,Si,Ge} systems

The isothermal sections of the {La,Ce}-{Al,Si,Ge}-In phase diagrams were constructed based on X-ray phase, X-ray structure and microsturucture analyses over the whole concentration region at 870 K. The existence of 3 ternary compounds was confirmed and formation of 25 new ternary compounds was found in these and related systems. The crystal structures of 24 compounds were determined. These compounds crystalize in 6 structure types and form 4 series of isotypic compounds. It was found, that the character of interaction of components becomes more complex with the changing of Al on Si and Ge. These systems were compared with related, containing Al, Ga and Sn and with systems R-transition metal-In. The types of relationships between new ternary indides and known types of structures were established. The temperature dependence of the electrical resistivity of the ternary compounds R2Ge2In and R3GeIn4(R = La, Ce, Pr, Nd) indicate on the metallic type of electrical conductivity. The results of temperature dependences of magnetic susceptibility of these compounds allow to attribute them either to weak Pauli paramagnetics or Curie-Weisse paramagnetics within temperature range 50 250 K.