Voznyy O. Electronic band structure and optical properties of the group III nitrides and their alloys

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U001086

Thesis Registration Form

0404U001086.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

27-02-2004

Specialized Academic Board

Д 76.051.01

Essay

Using local model pseudopotential method the electronic band structure of Ga(1-x)Al(x)N, Ga(1-x)In(x)N and In(1-x)Al(x)N alloys was calculated. Using 32-atoms supercells the influence of alloying effects on bandgap compositional dependences was investigated. The detailed analysis of dielectric function peaks origins was made. Comparison of the different ionicity models was made and the change of chemical bonding with alloys composition was investigated using total valence charge density.

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Files

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Возний.doc

Возний.pdf

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