Andronova E. Liquid phase epitaxy of GaSb structures for thermophotovoltaic cells

Object - methods and processes of epitaxial layers growth from a liquid phase; the purpose - technique development and research of processes of liquid phase epitaxy obtaining of GaSb homo- and heteroepitaxial structures with the set parameters for thermophotovoltaic converters, and research of an opportunity of thermophotovoltaic convertion efficiency increase due to long-wave radiation behind of GaSb absorption edge utilization; methods - optical and electric, mathematical modelling with use of the computer; novelty - for the first time original techniques of GaSb homo- and heteroepitaxial layers manufacturing are offered; for the first time GaSb, InSb and InAs substrates stability in In-Ga-Sb solution - melt, and stability to solid phase dissolution are theoretically and experimentally investigated; InSb quantum dots array use outlook for increase of efficiency of GaSb thermophotovoltaic converters is theoretically shown; liquid phase growth conditions are determined and for the first time InSb quantum size structures in matrix GaSb are received; results - manufacturing techniques of GaSb homo- and heteroepitaxial layers with layer thickness from nanometers up to micrometers and planar interface "layer - substrate" are developed; area of use - technology of semiconductor epitaxial structures.