Kravchina V. Receiving and properties of the silicon composition, modification under ion-plasma handling

Object - silicone technique and physics process witch former of it essenc; purpose - is working out of the ion-plasma etching and deposition; methods - infrared -, X-ray-, Auger electron - spectroscopy, optical and electron microscopy; novelty- for the first time there are shown what the etch velosity of deformational silicon depend on the type conduction and mechanical stress, tensile and compressive, and of theirs crystallography direction; there are determine what ion-chemical etch create negative charge on the surfers polycrystalline silicon there is maximum on the boundary of the films Si*-SiO2; for the first time work out the characterizations of plasma etches process so that silicon is etched and plasma products make set on the areas resist polymer over silica. These plasma products are oxidized. There are created local films self aligned with SiO2. The structure of creating local films is silicon oxide, which inclusive of fragments amorphous and polycrystalline silicon; area of use - technology of semiconductor devise.